[D-5] Transistor Technologies for Biological and Electrochemical Applications

[D-5-02] Signature of carrier delocalization in electrochemically doped conducting polymer DPPT-TT with electrolyte-gated transistor

〇Hisaaki Tanaka¹, Ryotaro Yamatoko¹, Shun-ichiro Ito¹, Taishi Takenobu¹ (1. Nagoya Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.D-5-02

Carrier delocalization in conducting polymers upon carrier doping has been a long-pursued issue both in terms of scientific and technological points of view. In this work, we demonstrate that a typical donor-acceptor (D-A)-type conjugated copolymer exhibits a signature of carrier delocalization within the crystalline domains up-on carrier doping. We adopt the electrolyte gating meth-od to continuously control the doping level, combined with the microscopic observation of injected charge car-riers by operando electron spin resonance (ESR) spec-troscopy. The ESR signal exhibits a clear line broadening in highly doped state characteristic of the scattering of conduction electrons by phonons (Elliott mechanism). Indeed, temperature dependence of the linewidth exhibits strong broadening at hither temperatures, consistent with the Elliott mechanism. The conduction electrons arise from the edge-on oriented crystalline domains as sug-gested from the observed anisotropy of the g values.