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[E-1-02] Room-temperature processable highly amorphous transparent B-doped In2O3 for use as a flexible conductive film
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.E-1-02
Recently, completely amorphous transparent conductive
oxides are strongly much attention for realization of next-generation flexible devices. In this study, we fabricated
highly amorphous B-doped In2O3 (IBO) with comparable
electrical properties of a commercial ITO, even at room temperature deposition. We also demonstrated a bending test to compare mechanical flexibility with ITO. The result showed that the IBO forms large domains with polygonal shape. We believe that the domain shape is important to improve mechanical flexibility of brittle oxide thin-films.
oxides are strongly much attention for realization of next-generation flexible devices. In this study, we fabricated
highly amorphous B-doped In2O3 (IBO) with comparable
electrical properties of a commercial ITO, even at room temperature deposition. We also demonstrated a bending test to compare mechanical flexibility with ITO. The result showed that the IBO forms large domains with polygonal shape. We believe that the domain shape is important to improve mechanical flexibility of brittle oxide thin-films.
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