HfO<sub>2</sub>-based ferroelectric-gated variable-area capacitors

Takaaki Miyasako

doi:https://doi.org/10.7567/SSDM.2022.E-1-04

Presentation information

Oral Presentation

10: Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process

[E-1] Emerging Thin Film Devices and Technologies

Tue. Sep 27, 2022 11:30 AM - 12:45 PM 105 (1F)

Session Chair: Jun Koyama (Semiconductor Energy Lab.), Juan Paolo Bermundo (NAIST)

12:15 PM - 12:30 PM

[E-1-04 (Late News)] HfO₂-based ferroelectric-gated variable-area capacitors

〇Takaaki Miyasako¹, Shingo Yoneda¹, Tadasu Hosokura¹, Masahiko Kimura¹, Eisuke Tokumitsu² (1. Murata Manufacturing Co., Ltd. (Japan), 2. Japan Advanced Institute of Science and Technology (JAIST) (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-1-04

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Presentation information

[E-1] Emerging Thin Film Devices and Technologies

[E-1-04 (Late News)] HfO2-based ferroelectric-gated variable-area capacitors

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[E-1-04 (Late News)] HfO₂-based ferroelectric-gated variable-area capacitors