[E-2] Advanced Group IV Thin Film Devices and Technologies

[E-2-03] A Novel Scheme for Fabrication of T-Gate Polysilicon Thin Film Transistors with Lightly Doped Drain

〇Cheng-Kuei Lee¹, Po-Hsun Yu¹, Chang-Mao Wu¹, Pei-Wen Li¹, Horng-Chih Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-2-03

We report a novel approach for fabricating T-gate polysilicon thin film transistors (T-gate TFTs) with lightly doped drain (LDD) structures using a single process step of S/D implantation. The fabrication is thus greatly simplified as compared to conventional LDD formation scheme. Moreover, the T-gate device exhibits not only suppressed off-state leakage but also much higher current drive than that of conventional poly-Si TFT without LDD.