First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

Kenta Moto

doi:https://doi.org/10.7567/SSDM.2022.E-2-05

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process

[E-2] Advanced Group IV Thin Film Devices and Technologies

2022年9月27日(火) 14:00 〜 16:00 105 (1F)

Session Chair: Shin-ichiro Kuroki (Hiroshima Univ.), Ryo Matsumura (NIMS)

15:15 〜 15:30

[E-2-05] First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

〇Kenta Moto^1,2, Kaoru Toko³, Tomonari Takayama¹, Toshifumi Imajo³, Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. JSPS Research Fellow (Japan), 3. Univ. of Tsukuba (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-2-05

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講演情報

[E-2] Advanced Group IV Thin Film Devices and Technologies

[E-2-05] First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

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