[E-2] Advanced Group IV Thin Film Devices and Technologies

[E-2-06] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-2-06

In order to enhance the quasi-direct band emission on Ge-based materials, we investigated the implementation of both tensile strain and n-type doping on the Ge-on-insulator (GeOI) structure. Our microsecond CW laser annealing technique was utilized to crystallize the Sb-doped Ge, and we successfully realized the highly tensile-strained n-type Ge-on-Insulator.