[E-3] Oxide Semiconductor TFT

[E-3-02] Contiguous Plasma-Enhanced ALD for High-Performance Zinc Oxide TFTs

〇Ben Daniel Rowlinson¹, Jiale Zeng¹, Vasilieos Mourgelas¹, Christian Patzig², Lutz Berthold², Joshua Daniel Akrofi¹, Martin Ebert¹, Harold Chong¹ (1. Univ. of Southampton (UK), 2. Fraunhofer Inst. IMWS (Germany))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-3-02

Metal-oxide thin-film transistors are a promising technology for enabling future advances in display drivers
and heterogeneous integration. Plasma-enhanced atomic
layer deposition (PEALD) tools with multiple precursors
allow contiguous deposition of high-quality metal-oxide
semiconductors and insulators, which are deposited in sequence without breaking vacuum. We demonstrate low
hysteresis ZnO TFTs with mobility above 16 cm^2/(Vs),
subthreshold swing of 115 mV/dec, and on/off current
ratio of 2.5×10^9. Combining outstanding performance
across all parameters is rare in low-temperature ZnO TFTs
making our devices competitive with the state of the art and
highly attractive for future voltage driver circuits and heterogeneous integration.