2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

10: Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process

[E-3] Oxide Semiconductor TFT

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 105 (1F)

Session Chair: Tsutomu Tezuka (KIOXIA Corp.), Cuan Liu (Sun Yat-sen Univ.)

5:15 PM - 5:30 PM

[E-3-04] Structural Relaxation of Rare-Metal-Free Oxide Semiconductors for Control of Bias Stress-Induced Instability in Solution-Processed Transistors

〇Yu-Jin Hwang1, Do-Kyung Kim1, Sang-Hwa Jeon1, Ziyuan Wang1, Sin-Hyung Lee1,2, In-Man Kang1,2, Jaewan Jang1,2, Jin-Hyuk Bae1,2 (1. Eng of Electronic and electrical, Univ. of Kyungpook (Korea), 2. Eng of Electronics, Univ. of Kyungpook (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-3-04

Here, we investigate the effects of structural relaxa-tion (SR) on bias stability in solution-processed Ra-re-metal-free Zinc-Tin-Oxide (ZTO) thin-film transistors (TFTs). To demonstrate the effects of SR, the annealing time of ZTO semiconductor was controlled. As the an-nealing time increased, the negative bias stress stability deteriorated due to the SR effect, especially increase of oxygen vacancy in ZTO. In contrast, the localized states near conduction band in ZTO decreased owing to the re-duction of the free volume and the stabilization of the local atomic condition by additional thermal energy as the annealing time increased. As a result, positive bias stress stability was improved by SR. This study might contribute to the optimization of semiconductor activa-tion for minimizing the negative and positive bi-as-induced instability of newly emerged rare-metal-free oxide semiconductor TFTs.

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