2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

10: Thin Film Electronics: Oxide / Non-single Crystalline / Novel Process

[E-3] Oxide Semiconductor TFT

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 105 (1F)

Session Chair: Tsutomu Tezuka (KIOXIA Corp.), Cuan Liu (Sun Yat-sen Univ.)

5:45 PM - 6:00 PM

[E-3-06] Utilizing Dual-stacked IGZO channel structure to Achieve Optical Memories Application

〇Kuan-Ju Zhou1, Ting-Chang Chang1, Simon M. Sze2, Ya-Ting Chien1, Po-Yu Yen1 (1. National Sun Yat-Sen University (Taiwan), 2. University of National Yang Ming Chiao Tung (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-3-06

Through bandgap engineering, a dual-stacked IGZO channel layer device (IGZO with higher Zinc con-tent/IGZO) was fabricated. The more Zn content in IGZO, the larger the energy band gap, which can be used as a buried channel design. Buried channel designs can be used for lower subthreshold swing and higher mobility. In addition, using the characteristics of Zn in-terstitial and Zn vacancy hole traps of the more Zn con-tents IGZO channel layer can cause the threshold voltage shift. Therefore, this device structure can be effectively used for optoelectronic memory storage during the oper-ation of dual-gate IGZO TFTs.

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