[E-4] Oxide Semiconductors for Logic and Memory Applications

[E-4-03] Optimum Composition Ratio of CAAC-IGZO

〇Toshiki Hamada¹, Yuichi Sato¹, Motomu Kurata¹, Naoki Okuno¹, Hitoshi Kunitake¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-4-03

Focusing on the composition ratios of indium to gallium and zinc in field-effect transistors using a c-axis-aligned crystalline oxide semiconductor as a channel material (OSFETs), we have performed fundamental evaluation of IGZO films and evaluation of the electrical characteristics of the OSFETs. The results of the Hall effect measurement and the electrical characteristics evaluation show that an OSFET with an In-rich composition has high mobility but exhibits normally-on characteristics, while an OSFET with an Zn-rich composition exhibits favorable normally-off characteristics.