[E-4] Oxide Semiconductors for Logic and Memory Applications

[E-4-06] Enabling area efficient oxide channel Fe-TFT based TCAM cell through monolithic 3D integration with low temperature annealing

〇Hongrae Joh¹, Sooji Nam², Minhyun Jung¹, Sung Haeng Cho², Sanghun Jeon¹ (1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-4-06

We demonstrate ferroelectric thin film transistor (Fe-TFT) devices with Al:IZTO oxide semiconductor channel through monolithic 3D (M3D) integration with low temperature (~250 ℃) focused-microwave-annealing (FMA) process for area efficient ternary contents ad-dressable memory (TCAM) cell. The Fe-TFT shows large memory window (MW of 3.2 V), good endurance (108 cy-cles) and long retention properties. Furthermore, mono-lithically integrated Fe-TFTs based TCAM cells are demonstrated.