2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

Joint Session (Area1&10)

[E-4] Oxide Semiconductors for Logic and Memory Applications

2022年9月28日(水) 09:00 〜 11:15 105 (1F)

Session Chair: Mamoru Furuta (Kochi Univ. of Technology), Masaharu Kobayashi (Univ. of Tokyo)

11:00 〜 11:15

[E-4-06] Enabling area efficient oxide channel Fe-TFT based TCAM cell through monolithic 3D integration with low temperature annealing

〇Hongrae Joh1, Sooji Nam2, Minhyun Jung1, Sung Haeng Cho2, Sanghun Jeon1 (1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-4-06

We demonstrate ferroelectric thin film transistor (Fe-TFT) devices with Al:IZTO oxide semiconductor channel through monolithic 3D (M3D) integration with low temperature (~250 ℃) focused-microwave-annealing (FMA) process for area efficient ternary contents ad-dressable memory (TCAM) cell. The Fe-TFT shows large memory window (MW of 3.2 V), good endurance (108 cy-cles) and long retention properties. Furthermore, mono-lithically integrated Fe-TFTs based TCAM cells are demonstrated.

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