[E-6] Advanced Oxide Sensors

[E-6-02] Indium oxide-based thin film transistor with high CO₂ sensitive (400) plane

〇Ayumu Nodera¹, Shun Mori¹, Shinya Aikawa¹ (1. Kogakuin University (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-6-02

CO2 gas sensors operating at relatively low tempera-ture are demanded for many applications. In2O3 semi-conductor is a promising candidate in terms of material processability and gas sensitivity. In this study, we fabri-cated In2O3-based thin-film transistors (TFT) and inves-tigated their CO2 sensitivities at 150 °C. Pure In2O3 and In2O3 co-sputtered with CaO (In2O3:Ca) films were pre-pared as an active channel. The In2O3:Ca TFT showed better CO2 sensitivity, which the drain current was ap-proximately 3 times higher compared to the initial N2 environment. The In2O3:Ca films has a reactive (400) plane-rich crystal structure, thus, high CO2 sensitivity was obtained compared to the In2O3 TFT with a stable (222) plane.