[E-6] Advanced Oxide Sensors

[E-6-04] A Novel Poly-Si/IGZO Thin-Film Transistor Process Platform for Sensor Applications

〇Ping-Che Liu¹, Jen-Chi Liao¹, Chun-Jung Su², Pei-Wen Li¹, Horng-Chih Lin¹ (1. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-6-04

We presented a novel three-mask scheme for fabricating a sensing cell consisting of a top-gated poly-Si thin-film transistor (TFT) and a bottom-gated IGZO TFT. The hybrid TFT sensing cell exhibits sharp transition with a high current ratio (≈ 1×10^5) between two switching levels.