[E-6] Advanced Oxide Sensors

[E-6-07] Nitrogen incorporation in SnO₂ matrix for passivation of oxygen vacancy and hole generation

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Shinya Aikawa¹ (1. Kogakuin Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.E-6-07

For realization of high-performance p-type oxide-based semiconductors, nitrogen (N)-doping is one of the promising candidates. However, there still have unclear mechanism how hole is generated and where N atom is incorporated. In our previous study, we demonstrated n- to p-type conversion of SnOx film only by N2 annealing. Here, we show the role of N in n-type SnOx based on the detailed analysis of chemical binding states. The results suggest that N contributes important role in both VO passivation and hole generation in the SnOx film.