[F-1] Ferroelectric Memory Materials

[F-1-01] Fabrication of Thin Ferroelectric Hf_0.5Zr_0.5O₂ Film by Millisecond Flash Lamp Annealing

Yasuo Nara¹, Yuto Ota¹, 〇Hideaki Tanimura², Hikaru Kawarazaki², Shin'ichi Kato² (1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions Co., Ltd. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-01

A ferroelectric Hf0.5Zr0.5O2 (HZO) thin film was formed by a short-time heat treatment using flash lamp annealing. For 10nm thick HZO, remnant polarization of about 30 uC/cm2 was obtained with higher endurance than RTA treatment. Further improvement of endurance was confirmed for thinner (5nm) HZO film.