[F-10] CMOS and Memory Applications of Low Dimensional Materials II

[F-10-03] Self-selective Monolayer MoS₂ Memtransistor Crossbar Array for In-memory Computing Applications

〇Xuewei Feng¹, Kah-Wee Ang² (1. Shanghai Jiao Tong Univ. (China), 2. National Univ. of Singapore (Singapore))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-10-03

We demonstrate a CVD grown monolayer MoS2 memtransistor crossbar array capable of performing neuromorphic functionalities. The three terminal MoS2 memtransistor allows for highly controlled conductance tuning of more than 3 orders of magnitude. Moreover, sneak path current can be eliminated with the use of individual gate terminal to turn off the unselected cells. This shows the feasibility to eliminate the crosstalk issues of a typical 1R array. Building on this architecture, a 3 by 3 memtransistor crossbar array is experimentally demonstrated, paving the way for large scale implementation in neuromorphic computing.