[F-2] PCM, MRAM, and RRAM

[F-2-03] Effect of SiN Sidewall and Reference-Layer-Thickness Dependence of MR Ratio for High Performance STT-MRAM

〇Yoshiteru Amemiya¹, Junichi Tsuchimoto^1,2, Hiroyuki Hosoya², Hiroki Nakanishi¹, Chihiro Watanabe¹, Akinobu Teramoto¹ (1. Hiroshima Univ. (Japan), 2. CANON ANELVA Corp. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-2-03

For high performance spin transfer torque magnetic random access memory (STT-MRAM), an ion beam etch-ing (IBE) is improved and a thickness of reference layer is controlled. In the improved process, a fabrication pro-cess of SiN sidewall is included. Magnetoresistance (MR) ratio of the fabricated device with the IBE angle of 20° becomes larger than that of 60° because of edge current suppression by the SiN sidewall and etching damage sup-pression by decreasing IBE angle. The thickness depend-ence of the reference layer is investigated, when the refer-ence layer is FeB and the thickness is 0.7, 0.9 or 1.05 nm. The MR ratio increases with increase of the reference layer thickness. The MR ratio of ~180% can be achieved, when the FeB thickness is 1.05 nm.