2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-2] PCM, MRAM, and RRAM

2022年9月27日(火) 14:00 〜 15:30 201 (2F)

Session Chair: Atsushi Himeno (Panasonic Corporation), Laurent Grenouillet (CEA-Leti)

14:30 〜 14:45

[F-2-03] Effect of SiN Sidewall and Reference-Layer-Thickness Dependence of MR Ratio for High Performance STT-MRAM

〇Yoshiteru Amemiya1, Junichi Tsuchimoto1,2, Hiroyuki Hosoya2, Hiroki Nakanishi1, Chihiro Watanabe1, Akinobu Teramoto1 (1. Hiroshima Univ. (Japan), 2. CANON ANELVA Corp. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-2-03

For high performance spin transfer torque magnetic random access memory (STT-MRAM), an ion beam etch-ing (IBE) is improved and a thickness of reference layer is controlled. In the improved process, a fabrication pro-cess of SiN sidewall is included. Magnetoresistance (MR) ratio of the fabricated device with the IBE angle of 20° becomes larger than that of 60° because of edge current suppression by the SiN sidewall and etching damage sup-pression by decreasing IBE angle. The thickness depend-ence of the reference layer is investigated, when the refer-ence layer is FeB and the thickness is 0.7, 0.9 or 1.05 nm. The MR ratio increases with increase of the reference layer thickness. The MR ratio of ~180% can be achieved, when the FeB thickness is 1.05 nm.

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