2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-2] PCM, MRAM, and RRAM

2022年9月27日(火) 14:00 〜 15:30 201 (2F)

Session Chair: Atsushi Himeno (Panasonic Corporation), Laurent Grenouillet (CEA-Leti)

14:45 〜 15:00

[F-2-04] Hf1-xZrxO2 RRAM Prepared via Co-Sputtering with High Uniformity, Fast Switching Time of 10 ns, and Low Switching Energy of 20 pJ

〇Quanzhou Zhu1, Jun Lan1, Bing Zhou1, Muhammad Zaheer1, Jinxuan Liang1, Peng Chen1, Feichi Zhou1, Longyang Lin1, Guobiao Zhang1, Mei Shen1, Xuewei Feng2, Zhen Chen3, Zhixiong Li3, Yida Li1 (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China), 3. Shenzhen Longsys Electronics Co., Ltd (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-2-04

In this work, the performance enhancement of HfxZr1-xO2 (HZO) using co-sputtering is reported. The HZO RRAMs shows reduced operating voltages (by 30%) as compared to control HfO2 and ZrO2 RRAMs respectively, attributed to the increase of oxygen vacancies as a result of the Zr alloying. Consequently, DC endurance greater than 350 cycles, retention time exceeding 104 s, fast switching time down to 10 ns, and switching energy of 20 pJ were achieved. Furthermore, characterization of multiple HZO RRAMs shows excellent uniformity (coefficient of variation less than 0.8), thus paving a potential path-way for further development of HZO RRAM for use in future storage and computing applications.

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