[F-2] PCM, MRAM, and RRAM

[F-2-05] Investigation of Structure Evolution and Oxygen-ion Migration in LaCoOx-Based Resistance Random Access Memory

〇Yen Jung Chen¹, Hung-Yang Lo¹, Jan-Chi Yang², Wen-Wei Wu¹ (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Cheng Kung University (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-2-05

Resistive switching occurs in a wide range of materials among the transition metal oxides (TMO) . In this work, we utilize epitaxial ternary metal oxides layer, LaCoOx (LCO), which grows on Nb-doped SrTiO3 (Nb-STO) substrate as RRAM device. We deposited Au/Ti metal as the top electrode, and measured the SET and RESET process with more than 900 cycles. In order to reveal the resistive switching behaviors, we use the TEM and STEM to observe the structure evolution and oxygen-ion migration in LaCoOx.
From the TEM results and corresponding Fast-Fourier-Transform Diffraction pattern (FFT-DP), the functionalities of LaCoOx films can be manipulated by distinct voltage. It is clearly demonstrated that the structure changes from monocrystalline to polycrystalline. This study not only revealed the oxygen-ion migration of LaCoOx but also proved it to be the promising candidate for RRAM application.