[F-2] PCM, MRAM, and RRAM

[F-2-06] Breaking the Thermal Stability Limit of Phase-Change Materials for Embedded Memory thanks to Innovative N-doped GeSe_1-xTe_x Alloys

〇Martina Tomelleri^1,2, Anthony Albanese¹, Chiara Sabbione¹, Niccolo Castellani¹, Christophe Licitra¹, Valentina M. Giordano ³, Daniel Benoit², Francoise Hippert⁴, Pierre Noe¹ (1. Inst. CEA-LETI, F-38000, Grenoble (France), 2. Indus. STMicroelectronics, F-38926 Crolles (France), 3. ILM, UMR 5306 Univ. Lyon 1-CNRS, F-69622 Villeurbanne Cedex (France), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-2-06

Recently, we revealed the unprecedented high thermal stability offered by the novel chalcogenide phase-change GeSe1-xTex alloys. The latter is of paramount interest for non-volatile PCM memory requiring high-temperature data retention. Herein, we investigate for the first time the effect of N incorporation in Ge-Se-Te thin films. We show that the thermal and programming performances in device can be potentially boosted thanks to the addition of ∼10 at.% of nitrogen, making N-doped GeSe1-xTex an extremely promising material for embedded PCM memories.