[F-3] Ferroelectric Devices

[F-3-01 (Invited)] HfO2–based FeRAM, from material perspective to circuit application

〇Jean Coignus¹, Terry Francois¹, Julie Laguerre¹, Simon Martin¹, Catherine Carabasse¹, Nicolas Vaxelaire¹, Adam Makosiej², Bastien Giraud ², Francois Andrieu ¹, Laurent Grenouillet¹ (1. CEA-Leti (France), 2. CEA-LIST (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-3-01