[F-3] Ferroelectric Devices

[F-3-03] Universal Phase Transition on the Polarization Switching Cycling of Antiferroelectric/Ferroelectric Hf_xZr_1-xO₂ towards high endurance performance

〇Danyang Chen¹, Shuman Zhong¹, Tianning Cui¹, Liying Wu¹, Jingquan Liu¹, Mengwei Si¹, Xiuyan Li¹ (1. Shanghai Jiao Tong Univ. (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-3-03

In this paper, we clarify a universal route of tetragonal-orthorhombic-monoclinic (T-O-M) phase transition on the polarization switching cycling of antiferroelectric/ferroelectric HfxZr1-xO2 (AFE/FE-HZO) system and develop a phase engineering method toward high endur-ance of AFE/FE memory devices. In addition, a 1012 endurance on 6 nm AFE HZO under 4.5 MV/cm and 1 MHz is achieved to demonstrate the potential of this strategy.