2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-3] Ferroelectric Devices

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 201 (2F)

Session Chair: Laurent Grenouillet (CEA-Leti), Hiroshi Naganuma (Tohoku Univ.)

5:15 PM - 5:30 PM

[F-3-04] Electrical Assessment of Scaled HfO2-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration

〇Justine Barbot1, Jean Coignus1, François Triozon1, Catherine Carabasse1, Olivier Glorieux1, François Aussenac1, François Andrieu1, Laurent Grenouillet1 (1. CEA-Leti (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-3-04

CMOS compatible TiN/HfO2:Si/Al2O3/TiN Ferroelectric Tunnel Junctions (FTJs) integrated in a 130nm Back-End of Line (BEOL) process are reported. FTJ device operation de-pendence on cycling conditions is assessed. Switching kinetic of FTJ is then studied and yields to the successful programming of four read-disturb-free conductance levels. These results confirm the potential of bilayer FTJs for scalability and future neuromorphic applications.

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