[F-3] Ferroelectric Devices

[F-3-04] Electrical Assessment of Scaled HfO₂-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration

〇Justine Barbot¹, Jean Coignus¹, François Triozon¹, Catherine Carabasse¹, Olivier Glorieux¹, François Aussenac¹, François Andrieu¹, Laurent Grenouillet¹ (1. CEA-Leti (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-3-04

CMOS compatible TiN/HfO2:Si/Al2O3/TiN Ferroelectric Tunnel Junctions (FTJs) integrated in a 130nm Back-End of Line (BEOL) process are reported. FTJ device operation de-pendence on cycling conditions is assessed. Switching kinetic of FTJ is then studied and yields to the successful programming of four read-disturb-free conductance levels. These results confirm the potential of bilayer FTJs for scalability and future neuromorphic applications.