2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[F-4] Emerging Memory Devices

2022年9月28日(水) 09:00 〜 10:15 201 (2F)

Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.), Atsushi Himeno (Panasonic Corporation)

10:00 〜 10:15

[F-4-05] Improving Synaptic Functionalities in Chitosan-based Electric-double-layer Transistors via Random Network Polysilicon Nanowire Channel

〇KI-WOONG PARK1, Won-Ju Cho1 (1. Univ. of Kwangwoon (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-4-05

In this study, the synaptic functionalities of artificial synaptic transistors were improved by nanowire-type polysilicon channel structures. The channel conductance, which is interpreted as synaptic plasticity, is efficiently modulated due to a high surface-to-volume ratio of the nanowire channel. As a result, the hysteresis window of the nanowire-type synaptic transistors was larger than that of the film-type synaptic transistors even in the same gate voltage sweeping range. In addition, the NW-type synaptic transistors were found to have superior short-term facilitation properties than the film-type ones through the measured PPF characteristics and frequency-dependent EPSC characteristics.

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