[F-8] Memory Devices for New Applications

[F-8-03] Split-Gate Ferroelectric Field-Effect Transistor for Reconfigurable Logic-in-Memory

〇Junghyeon Hwang¹, Giuk Kim¹, Sanghun Jeon¹ (1. Korea Advanced Institute of Science and Technology (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-8-03

Conventional semiconductor technology needs several devices to compose the majority logic. We present the majority logic operation with a single split-gate FeFET for non-volatile logic-in-memory (NV-LiM) technology. By using a novel write method, we found low voltage and high-speed operation were possible in split-gate FeFET, as well as improved endurance characteristics. In this presentation, we will demonstrate majority logic based reconfigurable computing using split-gate FeFET by controlling multiple inputs or stored ferroelectric polar-ization