[F-8] Memory Devices for New Applications

[F-8-05] The Demonstration of a Physical Unclonable Function (PUF) on a
Resistive-Gate FinFET Memory

M. Y. Lee¹, Y. J. Li², T. C. Kao³, C. F. Huang⁴, Y. S. Wu⁵, Y. H. Ye⁶, M. L. Miu⁷, 〇E Ray Hsieh Hsieh⁸, J. C. Guo⁹, S. S. Chung¹⁰ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan), 4. National Central Univ. (Taiwan), 5. National Central Univ. (Taiwan), 6. National Central Univ. (Taiwan), 7. National Central Univ. (Taiwan), 8. National Central Univ. (Taiwan), 9. National Yang Ming Chiao Tung Univ. (Taiwan), 10. National Yang Ming Chiao Tung Univ. (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-8-05