[F-9] CMOS and Memory Applications of Low Dimensional Materials I

[F-9-02] Realization of P-type MoTe2-TFET Via Laser-induced Doping Technique

〇Tianshun Xie¹, Kazuki Fukuda¹, Mengnan Ke¹, Nobuyuki Aoki¹ (1. Chiba University (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-9-02

The fabrication of p-type tunnel field effect transistor (TFET) composed of a transition metal dichalcogenide has great challenges due to the difficulty of n-type heavy doping. In this study, a p-type TFET has been successfully fabricated by using laser-induced doping technique to modulate the MoTe2 crystalline to n-type and p-type heavily doped regions to form a p+/i/n+ or i /n+ in-plane heterojunction.