[F-9] CMOS and Memory Applications of Low Dimensional Materials I

[F-9-04] Moire Schottky Barriers for Lower Contact Resistances on layered MoS₂

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge University (UK), 2. Wuhan University (China))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-9-04

We show how rotational Moire interfaces for electri-cal contacts between metals and monolayer MoS2 can be used to explain the metal dependence of physisorptive sites with weaker Fermi level pinning. This creates the smallest n-type Schottky barrier heights, giving the lowest contact resistances for physisorptive sites of In and noble metal Ag, as seen experimentally, but previously unexplained. They arise from a combination of low metal work function and physisorptive bonding at these sites.