2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-1] Cryo-CMOS

Tue. Sep 27, 2022 11:30 AM - 12:45 PM 301 (3F)

Session Chair: Sakura Takeda (NAIST), Anabela Veloso (imec)

11:30 AM - 11:45 AM

[G-1-01] Substrate Impurity Concentration Dependence of Sub-threshold Swing of Si n-Channel MOSFETs at Cryogenic Tempeartures down to 4 K

〇Min-Soo Kang1, Kei Sumita1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1. Univ. of Tokyo (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-1-01

The sub-threshold swing (SS) of Si n-MOSFETs is
experimentally and systematically evaluated in a
temperature range of 4 K to 300 K with varying the
substrate impurity concentration (Nsub) from ~1016 cm-3 to
~1018 cm-3, to obtain a physical understanding of SS at
cryogenic temperatures. It is clarified that the
temperature and ID dependencies of SS in n-MOSFETs
are well described by both mobile tail states and localized
interface states, irrespective of Nsub, and that the densities
of these states increase with increasing Nsub. A physical
origin of the tail states is studied by examining the impact
of substrate bias (Vsub) on the tail state width to separate
the effects of substrate impurity concentrations and
electric field. It is found, as a result, that the band tail
states can be explained by the Lifshitz model.

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