2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-1] Cryo-CMOS

Tue. Sep 27, 2022 11:30 AM - 12:45 PM 301 (3F)

Session Chair: Sakura Takeda (NAIST), Anabela Veloso (imec)

12:00 PM - 12:15 PM

[G-1-03] Anomalous Threshold Voltage Increase due to the Depletion of Extension Edges in Cryogenic MOSFETs

〇Takumi Inaba1, Hidehiro Asai1, Junichi Hattori1, Koichi Fukuda1, Hiroshi Oka1, Takahiro Mori1 (1. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-1-03

Anomalous threshold voltage increase was observed from short-channel bulk p-MOSFETs operating in the linear-mode. Because the increase was suppressed in the saturation-mode, a threshold voltage mismatch between
the linear- and saturation-mode increased as if drain-induced barrier lowering increased. On the basis of cryogenic TCAD simulation, the increase was attributed to the depletion of extension edges at cryogenic temperature.

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