[G-1] Cryo-CMOS

[G-1-03] Anomalous Threshold Voltage Increase due to the Depletion of Extension Edges in Cryogenic MOSFETs

〇Takumi Inaba¹, Hidehiro Asai¹, Junichi Hattori¹, Koichi Fukuda¹, Hiroshi Oka¹, Takahiro Mori¹ (1. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-1-03

Anomalous threshold voltage increase was observed from short-channel bulk p-MOSFETs operating in the linear-mode. Because the increase was suppressed in the saturation-mode, a threshold voltage mismatch between
the linear- and saturation-mode increased as if drain-induced barrier lowering increased. On the basis of cryogenic TCAD simulation, the increase was attributed to the depletion of extension edges at cryogenic temperature.