Temperature Dependence of MOSFET Series Resistance from 300 K to 4 K

Kiyoshi Takeuchi

doi:https://doi.org/10.7567/SSDM.2022.G-1-05

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-1] Cryo-CMOS

Tue. Sep 27, 2022 11:30 AM - 12:45 PM 301 (3F)

Session Chair: Sakura Takeda (NAIST), Anabela Veloso (imec)

12:30 PM - 12:45 PM

[G-1-05 (Late News)] Temperature Dependence of MOSFET Series Resistance from 300 K to 4 K

〇Kiyoshi Takeuchi¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1. Univ. of Tokyo (Japan), 2. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-1-05

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