Temperature Dependence of MOSFET Series Resistance from 300 K to 4 K

Kiyoshi Takeuchi

doi:https://doi.org/10.7567/SSDM.2022.G-1-05

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-1] Cryo-CMOS

2022年9月27日(火) 11:30 〜 12:45 301 (3F)

Session Chair: Sakura Takeda (NAIST), Anabela Veloso (imec)

12:30 〜 12:45

[G-1-05 (Late News)] Temperature Dependence of MOSFET Series Resistance from 300 K to 4 K

〇Kiyoshi Takeuchi¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1. Univ. of Tokyo (Japan), 2. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-1-05

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講演情報

[G-1] Cryo-CMOS

[G-1-05 (Late News)] Temperature Dependence of MOSFET Series Resistance from 300 K to 4 K

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