[G-10] Advanced CMOS: Device, Process and Material

[G-10-05] Low Temperature Selective Growth of Ga-Doped Germanium Source / Drain for pMOS Devices

〇Clement Porret¹, Gianluca Rengo^1,2,3, Mustafa Ayyad¹, Andriy Hikavyy¹, Erik Rosseel¹, Robert Langer¹, Roger Loo¹ (1. imec vzw (Belgium), 2. Quantum Solid State Physics, KU Leuven (Belgium), 3. FWO - Vlaanderen (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-05

The properties of Ge:Ga epilayers, grown selectively at low temperature using a cyclic deposition and etch chemical vapor deposition process, are investigated and benchmarked against their Ge:B counterpart. Ti / Ge:Ga contacts are evaluated with the aim of providing new solutions for advanced Ge-based devices.