2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

2022年9月29日(木) 16:00 〜 18:00 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

17:15 〜 17:30

[G-10-05] Low Temperature Selective Growth of Ga-Doped Germanium Source / Drain for pMOS Devices

〇Clement Porret1, Gianluca Rengo1,2,3, Mustafa Ayyad1, Andriy Hikavyy1, Erik Rosseel1, Robert Langer1, Roger Loo1 (1. imec vzw (Belgium), 2. Quantum Solid State Physics, KU Leuven (Belgium), 3. FWO - Vlaanderen (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-05

The properties of Ge:Ga epilayers, grown selectively at low temperature using a cyclic deposition and etch chemical vapor deposition process, are investigated and benchmarked against their Ge:B counterpart. Ti / Ge:Ga contacts are evaluated with the aim of providing new solutions for advanced Ge-based devices.

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