[G-10] Advanced CMOS: Device, Process and Material

[G-10-07] Super-conformal CVD Ruthenium with 1 Angstrom Liner in Advanced MOL Local Interconnect

〇Maryamsadat Hosseini¹, Alicja Leśniewska¹, Gyana Pattanaik², Robert Clark², Anish Dangol¹, Marleen H van der Veen¹, Nicolas Jourdan¹, Gert Leusink², Hunter Frost², Cory Wajda², Eugenio Dentoni Litta¹, Naoto Horiguchi¹ (1. imec (Belgium), 2. TEL (United States of America))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-07

Ruthenium is a prime candidate to replace Tungsten and Cobalt in MOL local interconnects. In this paper we demonstrate for the first time a seamless and barrierless narrow trench filling using super-conformal CVD Ru with ultra-thin liners (1 Å thick TiN or 2 Å thick TaN). We also report reliability studies that indicate Ruthenium does not drift into the oxide dielectric.