2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-10] Advanced CMOS: Device, Process and Material

Thu. Sep 29, 2022 4:00 PM - 6:00 PM 301 (3F)

Session Chair: Nobuyuki Mise (Hitachi High-Tech Corp.), Keisuke Yamamoto (Kyushu Univ.)

5:45 PM - 6:00 PM

[G-10-07] Super-conformal CVD Ruthenium with 1 Angstrom Liner in Advanced MOL Local Interconnect

〇Maryamsadat Hosseini1, Alicja Leśniewska1, Gyana Pattanaik2, Robert Clark2, Anish Dangol1, Marleen H van der Veen1, Nicolas Jourdan1, Gert Leusink2, Hunter Frost2, Cory Wajda2, Eugenio Dentoni Litta1, Naoto Horiguchi1 (1. imec (Belgium), 2. TEL (United States of America))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-10-07

Ruthenium is a prime candidate to replace Tungsten and Cobalt in MOL local interconnects. In this paper we demonstrate for the first time a seamless and barrierless narrow trench filling using super-conformal CVD Ru with ultra-thin liners (1 Å thick TiN or 2 Å thick TaN). We also report reliability studies that indicate Ruthenium does not drift into the oxide dielectric.

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