[G-2] Modeling, Simulation and Characterization

[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

〇Shao Chen Lee¹, Yu Ting Chen¹, Cheng Rui Liu¹, Sheng Min Wang¹, Ying Tsan Tang¹ (1. National Central University (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-2-02

Silicon carbide (4H-SiC) has been considered as one of the future candidates for power electronics components, ena-bling smaller size, faster switching speed, higher reliability, and higher efficiency than silicon-based MOSFETs. To date, however, the thermal performance of Si-Ge-C-based power MOSFETs is unclear. This work explains the thermal prop-erties of Si1-xGexC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a novel low leakage, high thermal conductivity and high power 4H-GeC MOSFET device.