2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-2] Modeling, Simulation and Characterization

2022年9月27日(火) 14:00 〜 16:00 301 (3F)

Session Chair: Satofumi Souma (Kobe Univ.), Seongjae Cho (Gachon Univ.)

14:30 〜 14:45

[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

〇Shao Chen Lee1, Yu Ting Chen1, Cheng Rui Liu1, Sheng Min Wang1, Ying Tsan Tang1 (1. National Central University (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-2-02

Silicon carbide (4H-SiC) has been considered as one of the future candidates for power electronics components, ena-bling smaller size, faster switching speed, higher reliability, and higher efficiency than silicon-based MOSFETs. To date, however, the thermal performance of Si-Ge-C-based power MOSFETs is unclear. This work explains the thermal prop-erties of Si1-xGexC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a novel low leakage, high thermal conductivity and high power 4H-GeC MOSFET device.

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