[G-2] Modeling, Simulation and Characterization

[G-2-03] Large Radiation Damages to Si MOS Devices Induced by Intermediate Energy Region X-ray Irradiation

〇Naohiro Matsukawa¹, Koichiro Inoue¹, Takao Sueyama¹ (1. KIOXIA Corp. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-2-03

It is found that medium energy X-ray irradiation causes greater, more than one order of magnitude, damages than high energy X-ray irradiation in Si MOSFETs. This phenomenon could be attributed to larger X-ray absorption by photoelectric effect in medium energy region, and smaller X-ray absorption caused by the Compton effect in high energy region. X-ray energy dependent radiation damages, therefore, should be seriously considered to evaluate exact radiation hardness of the Si MOS devices.