2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-2] Modeling, Simulation and Characterization

Tue. Sep 27, 2022 2:00 PM - 4:00 PM 301 (3F)

Session Chair: Satofumi Souma (Kobe Univ.), Seongjae Cho (Gachon Univ.)

3:00 PM - 3:15 PM

[G-2-04] Resistance Modeling of Short-range Connections: Impact of Current Spreading

〇Davide Tierno1, Victor Vega-Gonzalez1, Simone Esposto1, Ivan Ciofi1 (1. imec (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-2-04

We investigated the impact of current spreading (CS)
on the resistance of short-range connections by performing
simulations in Synopsys Sentaurus, based on a calibrated
resistivity model. As a case study, we considered
Vertical-Horizontal-Vertical (VHV) middle-of-line
(MOL) connections, recently introduced to boost the routing
of 4-Track (4T) standard cells (SDC). We analyzed the
impact of via and line geometry on VHV link resistance
(RLink). We found that low aspect ratios (AR) lines are
needed to minimize the average SDC resistance (RSDC).
We performed extensive resistance simulations of various
short-range connections and concluded that large AR
lines are indeed detrimental when RLink is dominated by
the vias. Finally, we show that ignoring CS can lead to significant miscalculations of Rlink in such scenarios.

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