[No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

Donghyun Kim

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Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-2] Modeling, Simulation and Characterization

2022年9月27日(火) 14:00 〜 16:00 301 (3F)

Session Chair: Satofumi Souma (Kobe Univ.), Seongjae Cho (Gachon Univ.)

15:15 〜 15:30

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

〇Donghyun Kim^1,2, Sylvain Barraud³, Jae Woo Lee², Gerard Ghibaudo¹, Christoforos Theodorou¹ (1. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, Grenoble INP, CNRS, IMEP-LAHC (France), 2. Electronics and info. engineering, Korea Univ. (Korea), 3. Univ. Grenoble Alpes, CEA, LETI (France))

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講演情報

[G-2] Modeling, Simulation and Characterization

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

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