[G-2] Modeling, Simulation and Characterization

[G-2-07 (Late News)] Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Wen Hsin Chang¹ (1. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-2-07