2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

Focus Session 1 (Area1&2&9)

[G-3] Quantum Computing I

Tue. Sep 27, 2022 4:15 PM - 5:45 PM 301 (3F)

Session Chair: Jun Yoneda, Masahiko Ishida (NEC Corp.)

4:45 PM - 5:00 PM

[G-3-02] Introduction of deep impurity levels of S and Zn and high temperature single-electron transport in Si tunnel FETs

〇Yoshisuke Ban1, Kimihiko Kato2, Shota Iizuka2, Shigenori Murakami2, Koji Ishibashi1, Satoshi Moriyama3, Takahiro Mori2, Keiji Ono1 (1. RIKEN (Japan), 2. AIST (Japan), 3. Tokyo Denki Univ. (Japan))

Presentation style:

https://doi.org/10.7567/SSDM.2022.G-3-02

We introduced deep impurity levels with strong electron confinement into Si devices for high temperature operation of Si qubit and observed single-electron transport through the deep levels. First, Group II-VI impurities, S and Zn, were introduced into the Si substrate by ion implantation as deep impurities, and post-implantation annealing condition was found from the depth profiles of S and Zn measured by SIMS. Next, the formation of deep levels in Si was confirmed by DLTS analyses. Then, we performed the process integration into Si devices under the S and Zn I/I condition found in the above experiments. To realize single-electron transport through deep impurity levels, we employed a single-electron transistor with a tunnel FET structure. Finally, as a result of the evaluation of S and Zn implanted Si TFETs, large charging energy values were observed at 10 K and 300 K. These values are 10 - 20 times higher than room temperature, suggesting high temperature stability as a Si qubit.

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