[G-3] Quantum Computing I

[G-3-05] Electrically-addressable engineering in self-assembled Ge double quantum-dots for CMOS integratable quantum electronic devices

〇Yu Ju Chiu¹, I Hsiang Wang¹, Pei Wen Li¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-3-05

We reported a CMOS approach for fabricating germanium double quantum dots with inter-QD coupling barrier of Si3N4 or Si-fin. Individual QDs and their inter-QD coupling barrier are electrically addressable by individual, well-isolated electrodes through self-organized dielectric layers using spacer and self-assemble technologies. Based on a pre-patterned Si-fin that is designed to serve as coupling barrier, poly-Si source/drain reservoirs self-align with the Si-fin barrier via Si3N4 spacer layers.