[G-6] Ferroelectric Devices

[G-6-01] The First Demonstration of High-performance Top-gated BEOL Ferroelectric Memtransistor thorough ITO-IGZO Heterojunction Channel Engineering

〇ChunKuei CHEN¹, Sonu Hooda¹, Zihang Fang¹, Shih-Hao Tsai¹, Evgeny Zamburg¹, Aaron Voon-Yew Thean¹ (1. Univ. of Singapore (Singapore))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-6-01

For the first time, we demonstrate high-performance top-channel ferroelectric FETs by engineering an InSnOx/InGaZnOx heterojunction interface with HfZrOx. The device process thermal budget is very low, making it highly suitable for monolithic 3D integration with low-k/Cu back-end-of-line. Reliable top-gated channel FeFETs with sputter-deposited IGZO is notoriously difficult to achieve, due to the poor quality assurance of gate-channel interface, which is further challenged by the BEOL thermal budget constraints. Through heterojunction channel engineering, our top-gated FeFETs spot record performance metrics that are among the best-in-class IGZO FeFETs reported to date, featuring low interface/bulk trap density, high electron mobility of 57cm2/Vs, near-ideal subthreshold swing (S.S.) of 64mV/dec., and high endurance exceeding 107 cycles.