[G-6] Ferroelectric Devices

[G-6-02] Comprehensive Evaluation of Ferroelectric-Metal FET with Stacked-Nanosheet Architecture for Memory and Synapse Applications

〇Heng Li Lin¹, Pin Su¹ (1. Inst. of Electronics, Univ. National Yang Ming Chiao Tung (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-6-02

We have conducted a comprehensive evaluation for
the ferroelectric-metal FET with stacked-nanosheet
architecture (FeM-Nanosheet) using Monte-Carlo
simulations with nucleation-limited-switching (NLS)
based model. In addition to the area-ratio (AR) effect
enabled by increasing the number of tiers, our study
suggests that adequately adjusting the FE (orthorhombic
phase) percentage can further boost the memory window
of the FeM-Nanosheet NVM. Moreover, using the FE
percentage as a knob, the interlayer field which is crucial
to reliability and the depolarization field which is
important to data retention can also be reduced. For
synapses conductance response, our study indicates that
the AR can raise the effective W/L to boost the drain
current and Gmax/Gmin, while adjusting the FE percentage
can be used to optimize the conductance response
including linearity and symmetry for the FeM-Nanosheet
synapse under the stimulation of identical pulse chain.