[G-6] Ferroelectric Devices

[G-6-03] Investigation and Mitigation of Write Disturb for 1T FeFET NVM considering Accumulation Effect

〇Po-Yi Lee¹, Yi-Chin Luo¹, Pin Su¹ (1. Inst. of Electronics, Univ. of National Yang Ming Chiao Tung (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-6-03

We have investigated the write disturb problem for 1T-FeFET NVM by using time-domain Monte-Carlo simulations with nucleation-limited switching (NLS) model that can capture the ferroelectric accumulative switching behavior. Our study indicates that the accumulation effect is crucial to the FeFET dynamic response under disturb cycles, and adequately reducing the writing voltage (Vw) or employing Vw/3 inhibition scheme can significantly mitigate the disturb. Besides, we have explored the feasibility of utilizing textured ferroelectric with (111)-orientation to mitigate the write disturb problem for the 1T-FeFET NVM.