[G-6] Ferroelectric Devices

[G-6-04] Boosting the Erase Efficiency of FDSOI FeFET by the Band-to-Band Tunneling Process

〇Xiaole Jia¹, Chengji Jin¹, Jiajia Chen¹, Lulu Chou², Huan Liu¹, Zhi Gong¹, Yue Peng², Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-6-04

We have theoretically investigated the memory characteristics, especially for erase operation of fully-depleted sili-con-on-insulator (FDSOI) ferroelectric field-effect transistor (FeFET) by considering the band-to-band tunneling (BTBT). It is found that the significantly increased hole concentration in the channel region due to BTBT is more favorable in the po-larization switching during erase operation. As a result, the BTBT boosts erase efficiency and memory window of the FDSOI FeFET.