[G-7] Advanced CMOS: Device Technology

[G-7-04] Mobile-Ionic FETs Based on Amorphous Dielectric with Steep Subthreshold Swing

〇Huan Liu¹, Lulu Chou², Chengji Jin¹, Jiajia Chen¹, Xiao Yu¹, Yan Liu², Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-7-04

Thanks to the surface potential amplification effect induced by ions movement in the dielectric, the steep subthreshold swing (SS) of 25 and 19 mV/decade over 2 decades has been realized at forward and reverse sweep-ing, respectively, in mobile-ionic FETs (MIFET) with 3.5 nm amorphous (a-) ZrO2. The negative differential re-sistance (NDR) phenomenon can be observed in devices. MIFET exhibits a stable ferroelectric-type hysteresis at the wide temperature range from room temperature to 77K, with temperature-independent SS, indicating the possible low power utilization in cryogenic.