[G-8] Ferroelectric Material and Process

[G-8-01] Investigation of NH₃ Plasma Nitridation on Reliability of Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric Hf_xZr_1–xO₂ FETs

Dong Ru Hsieh¹, Chia Chin Lee¹, 〇Wei Ju Yeh¹, Cheng En Hsieh¹, Huai En Luo¹, Tien Sheng Chao¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.G-8-01

In this study, double-layer gate-all-around stacked poly-Si nanosheet channel ferroelectric HfxZr1–xO2 FETs with NH3 plasma at both the ZrO2/TiN and TiN/HZO in-terfaces were successfully fabricated and their reliability was investigated and discussed for the first time. By NH3 plasma at both the metal/oxide interfaces to suppress the generation of oxygen vacancies (Vo), the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μA/μm, and a better positive gate bias stress (PGBS) immunity for monolithic 3-D integrated circuits.